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High Power GaAs SPDT Switch DC - 2.5 GHz
Features
* * * * * * * +36 dBm Typ. 1 dB Compression Point, -8V Supply +65 dBm Typ. 3rd Order Intercept Point, -8V Supply Low Insertion Loss: 0.4 dB Typical Low Power Consumption: 100 W Fast Switching Speed Low Cost SOIC8 Plastic Package Tape and Reel Packaging Available1
SW-279
V2.00
SO-8
PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .010(0.25) M B M
Orientation mark PIN 1 .1890-.1968 (4.80-5.00) -A.004 (0.10)
.0532-.0688 (1.35-1.75) 0-8 -C.0040-.0098 (0.10-0.25) .013-.020 TYP. (0.33-0.51)
.0099-0.0196 x 45 Chamfer (0.25-0.50) .016-.050 (0.40-1.27) .0075-0.0098 (0.19-0.25)
Description
M/A-COM's SW-279 is a GaAs MMIC SPDT switch in a low cost SOIC 8-lead surface mount plastic package. The SW-279 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The SW-279 is fabricated with a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passivation for increased performance and reliability.
.050(1.27) BSC.
.010(0.25) M C A M B S 8- Lead SOP outline dimensions Narrow body .150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = 0.010 (.xx = 0.25) .xx = 0.02 (.x = 0.5)
Ordering Information
Model No. SW-279 PIN SW-279TR SW-279RTR Unit DC - 2.0 GHz DC - 1.0 GHz DC - 0.5 GHz DC - 0.1 GHz DC - 2.0 GHz DC - 1.0 GHz DC - 0.5 GHz DC - 0.1 GHz DC - 2.0 GHz dB dB dB dB dB dB dB dB nS nS mV dBm dBm dBm dBm Package SOIC 8 Lead Forward Tape & Reel Reverse Tape & Reel Min. Typ. 0.6 0.4 0.35 0.2 16 32 38 38 1.2:1 30 35 12 33 35.8 61 65 Max 0.8 0.6 0.5 0.4
Electrical Specifications, TA = +25C
Parameter Insertion Loss Test Conditions2
Isolation
14 28 35 35
VSWR Trise, Tfall Ton, Toff Transients One dB Compression Point 3rd Order Intercept
10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Input Power (5V Supply/Control) Input Power (8V Supply/Control) Measured Relative (5V Supply/Control) to Input Power (8V Supply/Control) (for two-tone input power up to +10 dBm)
0.9 GHz 0.9 GHz 0.9 GHz 0.9 GHz
1. Refer to "Tape and Reel Packaging" Section, or contact factory. 2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports, unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the package from ground or any other voltage.
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
High Power GaAs SPDT Switch
SW-279
V2.00
Absolute Maximum Ratings
Parameter Max. Input Power 0.5 - 2.0 GHz 5V Control and Supply 8V Control and Supply 10V Control and Supply Power Dissipation Control Voltage Operating Temperature Storage Temperature Thermal Resistance2: jc = 87 C/W
1. Operation of this device above any one of these parameters may cause permanent damage. 2. Thermal resistance is given for TA = 25C. TCASE is the temperature of leads 1 and 4.
Two Tone IP3 Measurements
Bias Voltage 0,-5V 0,-6V 0,-7V 0,-8V 0,-10V 0,-5V 0,-6V 0,-7V 0,-8V 0,-10V 0,-5V 0,-6V 0,-7V 0,-8V 0,-10V 0,-5V 0,-6V 0,-7V 0,-8V 0,-10V Input Power (dBm) +27 +27 +27 +27 +27 +28 +28 +28 +28 +28 +29 +29 +29 +29 +29 +30 +30 +30 +30 +30 3rd Order Intermodulation Products (dBC) -34 -49 -64 -65 -66 -30 -41 -52 -60 -60 -28 -34 -44 -52 -52 -26 -32 -38 -44 -44 Second IP3 Harmonic (dBm) (dBc) +44 +51 +59 +59 +60 +43 +48.5 +54 +58 +58 +43 +46 +51 +55 +55 +43 +46 +49 +52 +52 -61 -61 -63 -63 -63 -58 -58 -57 -57 -57 -54 -54 -54 -54 -54 -52 -51 -51 -51 -51
Absolute Maximum1
+37 dBm +40 dBm +42 dBm 1.0 W -12V, +1V -40C to +85C -65C to +150C
Pin Configuration
Pin No. 1 2 3 4 5 6 7 8 Description GND, Thermal Contact GND RF Common GND, Thermal Contact RF1 A B RF2
Functional Schematic
RF2 8 B 7 A 6 RF1 5
Truth Table
Control Inputs1
1 2 3 4
Condition of Switch RF Common to Each RF Port RF1 On Off RF2 Off On
GND GND RFC GND Thermal Thermal Contact Contact
A 1 0
B 0 1
Typical Performance
ISOLATION VS FREQUENCY ISOLATION vs. FREQUENCY
ISOLATION (dB) 70 60 50 40 30 20 10 0 0 0.5 2.0 1.0 1.5 FREQUENCY (GHz) 2.5
1. 0 - 0 to -0.2V @ 20 A max. 1 - -5V @ 50 A Typ to -10V @ 800 A max.
ISERTION LOSS VS FREQUENCY INSERTION LOSS vs. FREQUENCY
1.0 LOSS (dB) .75
+85C
0.5 0.25 0 0 0.5
+25C
-40C
2.0 1.5 1.0 FREQUENCY (GHz)
2.5
VSWR VS FREQUENCY VSWR vs. FREQUENCY
1.5 1.4 VSWR 1.3 1.2 1.1 1.0 0 0.5 2.0 1.0 1.5 FREQUENCY (GHz) 2.5
COMPRESSION VS vs. CONTROL VOLTAGE (900 MHZ) COMPRESSION CONTROL VOLTAGE (900 MHz)
COMPRESSION (dBm) 40 35 30 25 20 15 10 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 CONTROL VOLTAGE (Volts) 0.1 dB Compression 1.0 dB Compression
Specifications Subject to Change Without Notice.
2
North America: Tel. (800) 366-2266 Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020

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